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Лаборатория топологических квантовых явлений в сверхпроводящих системах

Сергей Дижур - старший научный сотрудник, к.ф.-м.н.

Current position
Senior Researcher, Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Moscow, Russia

Education and Training

2006 Ph.D. in the Physics of Semiconductors, Institute of Radioengineering and Electronics of RAS, Moscow, Thesis: ’Persistent tunneling photoconductivity effect in two-dimensional electron system of near-surface delta-doped layer in GaAs.’. Advisor: Dr. Igor Kotelnikov

1997–2000 Graduate school and pre-doctoral research, Moscow Institute of Physics and Technology (Solid-state Physics program) and Lebedev Physical Institute of RAS (Cryogenic Dept.), Focus of studies: Quantum Hall effect. Advisor: Prof. Vladimir Pudalov

1997 Diploma Engineer-Physicist, Moscow Institute of Physics and Technology, Applied Mathematics and Physics.

1991–1997 B.S./M.Sc. in the field of Condensed Matter Physics, Moscow Institute of Physics and Technology, Department of Problems of Physics and Energetics (High Pressure Physics program), M.Sci., Thesis: ’Investigation and design of cryo-electronic devices for the experimental physics at low temperatures.’. Advisor: Prof. Vladimir Pudalov 

Employment and Research Expertise

2018–Jun 2019 Senior Research Associate, School of Engineering, Brown University, Providence, RI, USA, Laboratory for Emerging Technologies (Principal Investigator: Prof. J.M. (Jimmy) Xu). Tunable Second harmonic generation experiments; EMI shielding of carbon-based materials; thermoelectric effects in carbon nanotubes and reduced graphene oxide systems; tunneling optical rectification: resistance switching/memristor; ultra violet photolithography setup design for photonic crystals; piezo-fibers for energy harvesting; equipment maintenance and repair.

2017–2018 Visiting Scholar, Electrical and Computer Engineering Department, University of Delaware, Newark, DE, USA, AFOSR Weyl Fermion program ”Weyl Fermion devices for chip scale communications” (Principal Investigator: Prof. James Kolodzey.). Design samples configuration of Ge1−xSnx with high x as a prospective Weyl semimetal, transport and optical measurement.

2016–present Senior Research Staff/Group Leader, Institute of Radioengineering and Electronics of RAS, Moscow, Russia, Research group ”Surface States of Dirac Fermions” (PI: Prof. Vladimir Volkov).. Spectroscopy research of nano-perforated graphene and carbon films. Magnetotransport measurements on of graphene-based materials.

2006–present Research Staff (from 2008 – Senior Researcher), Institute of Radioengineering and Electronics of RAS, Moscow, Russia, Electronic Processes in Semiconductor Materials Lab (PI: Dr. Miron Kagan), and Photoelectronic Phenomena Lab (PI: Dr. Igor Kotelnikov.). Study of transport phenomena in GaAs/AlAs semiconductor superlattices with an optical resonator. Research of THz-range structures based on superlattices for prospective roomtemperature generator. Experimental investigation of localization effects in 2D electron system in semiconductors. Studying the tunneling density of states near the Fermi level of 2DES. Metal-insulator transition discovering.

2000–2006 Pre-doctoral Researcher , Institute of Radio-engineering and Electronics of RAS, Moscow, Russia, Photoelectronic Phenomena Lab (PI: Dr. Igor Kotelnikov.). Tunneling spectroscopy experiments on δ-doped structures under low temperatures/illuminations/magnetic fields/high pressure. Persistent tunneling photoconductivity effect discovering. Observation of electron reflection due to intersubband polaron interaction

1997–2000 Postgraduate/Junior Researcher, Lebedev Physical Institute Cryogenics Department, Moscow, Russia, and Institute for High Pressure Physics Low Temperature Department Troitsk, Moscow Region, Russia (Mentor: Dr. Vladimir Pudalov.). Experimental investigations of two dimensional electron gas in MOS-structures and strained Si-Ge layers. Dilution refrigerator creation.

Other skills
MATLAB, LabView, Microcal Origin, AutoCAD
Master Scuba Diver Trainer PADI

Full Sigma Xi Member (2018);
Russian Science Support Foundation ”The Best Postgraduates of RAS” (2008);
Young Scientists Competition Prizes of IRE RAS (2003, 2004, 2005);
George Soros Undergraduate Fellowship (1995) 

Invited conference presentations (representative, out of 20)
2008 X International Conference of Young Scientists "The problems of solid state physics and high pressure"
2008 XVII Ural International Winter School of Physics of Semiconductors
2008 Russian Young Scientist Conference on Micro-, Nanotechnology and its Application

Publications (representative, out of 40) 
Tariq Mehmood, Jin Ho Kim, Do-Joong Lee, Sergey Dizhur, et al, A Microstructuring Route to Enhanced Thermoelectric Efficiency of Reduced Graphene Oxide Films ACS Applied Materials & Interfaces (to be published) (2019)

2. I. V. Altukhov, S. E. Dizhur, M. S. Kagan, et al, Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains Semiconductors, 52, No. 4, pp. 473–477 (2018)

3. I. V. Altukhov, S. E. Dizhur, M. S. Kagan et al, Effect of a Terahertz Cavity on the Conductivity of Short-Period GaAs/AlAs Superlattices. JETP Letters, 103, No. 2, pp. 122-124. (2016)

4. I. N. Kotel’nikov, S. E. Dizhur, E. N. Morozova, E. V. Devyatov, and V. T. Dolgopolov, Zero Bias Tunneling Anomaly in a Two Dimensional Electron System with Disorder. JETP Letters, 96, No. 9, pp. 577-581. (2012)

5. E N Morozova, I N Kotel’nikov, S E Dizhur, E V Deviatov and V T Dolgopolov, Electronelectron interaction and tunnel density of states at the Fermi level in high-density two-dimensional electron system. Journal of Physics: Conference Series Institute of Physics and IOP Publishing Limited 193, 0121271-0121274 (2009)

6. Eugene Dizhur, Anatoly Voronovsky, Igor Kotel’nikov, Sergey Dizhur, Pressure-induced transition of 2DEG in delta-doped GaAs to insulating state. phys. stat. sol. (b) 244 No 1, 453-459 (2007) 

7. S. E. Dizhur, I. N. Kotel’nikov, and E. M. Dizhur, Reflection of Electrons during Tunneling and an Intersubband Polaron in the 2D Electron System of a Delta-Layer in GaAs. Journal of Communications Technology and Electronics, 51, No. 5, 588-595 (2006) 

8. E. Dizhur, A. Voronovsky, A. Fedorov, I. Kotel’nikov and S. Dizhur, Metal-insulator transition in the 2DEG in Al/δ-Si:GaAs under pressure. Physica E: Low-dimensional Systems and Nanostructures, 34 (1-2), 628–631 (2006) 

9. I. N. Kotel’nikov, S. E. Dizhur, M. N. Feiginov and N. A. Mordovets, The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/delta(Si)-GaAs structures. Semiconductors, 40, No 7, 818-824 (2006) 

10. I. N. Kotel’nikov and S. E. Dizhur, Scattering involving LO phonons in tunneling to the 2D electron system of a delta layer. JETP Letters, 81, No 9, 458-461 (2005)

11. E. M. Dizhur, A. N. Voronovsky, A. V. Fedorov, I. N. Kotel’nikov and S. E. Dizhur, Transition of the near-surface delta-layer in an Al/delta(Si)-GaAs tunnel structure to the insulating state under pressure. JETP Letters, 80, No 6, 433-435 (2004)

12. S.E.Dizhur, I.N.Kotel’nikov, V.A.Kokin, and F.V.Shtrom, 2D-subband spectra variations under persistent tunneling photoconductivity condition in tunnel delta-GaAs/Al structures. Physics of Low-Dimensional Structures, 11/12, 233-244 (2001) 

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