Laboratory of Functional Materials and Devices for Nanoelectronics

The laboratory was founded in April 2014 based on the results of an open MIPT contest, conducted as part of the 5-100 program aimed at making MIPT and other top Russian universities more competitive internationally. The lab is equipped with growing, analytical, and technological equipment on par with top international research centers. This allows the team to conduct whole-cycle of research, including growing thin-film structures, studying their physical and functional properties, and manufacturing device prototypes.

The laboratory conducts experimental research of new physical effects in nanoscale structures based on inorganic materials, which can be used to develop synthetic multifunctional devices. Devices of this type are an alternative approach to creating computational systems and next-generation information technology.

Main lines of research:

• Development of methods for synthesizing new functional materials in nanoscale layers and multilayer structures with potential applications in nanoelectronic devices.

• Work on new physical principles for writing and storing information to create new energy-independent memory devices.

• Development of the physical and technological basis for the creation of innovative energy-independent memory devices based on ultrathin layers of new ferroelectric materials.

• Creation of prototype memory devices based on reversible switching in metal-insulator-metal nanostructures.

• Usage of multilevel resistive switching in memristors to create inorganic analogs of biological synapses. Development of neuromorphic chips for modeling parallel computing architecture in artificial neural networks.

Andrey Zenkevich

Head of laboratory

PhD in physics and mathematics

Yuri Matveev

Senior researcher

PhD in physics and mathematics

Sergei Zarubin


Doctoral student

MIPT graduate


ACS Applied Materials & Interfaces

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

Anna Chernikova, Maksim Kozodaev, Andrei Markeev, Dmitrii Negrov, Maksim Spiridonov, Sergei Zarubin, Ohheum Bak, Pratyush Buragohain, Haidong Lu, Elena Suvorova, Alexei Gruverman, and Andrei Zenkevich

Moscow Institute of Physics and Technology

Nanoscale Research Letters

Crossbar Nanoscale HfO2-Based Electronic Synapses

Yury Matveyev, Roman Kirtaev, Alena Fetisova, Sergey Zakharchenko, Dmitry Negrov and Andrey Zenkevich

147 page

Moscow Institute of Physics and Technology


Microelectronic Engineering

Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

A. Chernikova, M. Kozodaev, A. Markeev, Yu. Matveev, D. Negrov, O. Orlov

15 page

Moscow Institute of Physics and Technology

Journal of Magnetism and Magnetic Materials

High-temperature ferromagnetism of Si1–xMnx (x ≈ 0.5) nonstoichiometric alloys

V. Rylkov, A. Bugaev, O. Novodvorskii, V. Tugusheva, E. Kulatov, A. Zenkevich, A. Semisalova, S. Nikolaev, A. Vedeneev, A. Shorokhov, D.Aver’yanov, K. Chernoglazov, E. Gan’shina, N. Perov, A. Granovsky, V.Panchenko, S. Zhou

39-43 page

Moscow Institute of Physics and Technology

physica status solidi (a)

K.V. Egorov, R.V. Kirtaev, Yu.Yu. Lebedinskii, A.M. Markeev, Yu.A. Matveyev, O.O. Orlov, A.V. Zablotskiy and A.V. Zenkevich

Complimentary and bipolar regimes of resistive switching in fully ALD grown TiN/HfO2/TiN MIM-stacks

809-816 page

Moscow Institute of Physics and Technology

Journal of Applied Physics

Resistive switching and synaptic properties of fully ALD grown TiN/HfO2/TiN devices

Yu. Matveyev, K. Egorov, A. Markeev and A. Zenkevich

Moscow Institute of Physics and Technology

physica status solidi (b)

Structural, chemical and electrical properties of ALD grown HfxAl1-x Oy thin films for MIM capacitors

A. Chernikova, A. Markeev, Yu. Lebedinskii, M. Kozodaev and A. Zablotskiy

701-708 page

Moscow Institute of Physics and Technology


Physical Review B

Giant bulk photovoltaic effect in thin ferroelectric BaTiO3 films

A. Zenkevich, Yu. Matveyev, K. Maksimova, R. Gaynutdinov, A. Tolstikhina, and V. Fridkin

Moscow Institute of Physics and Technology

Thin Solid Films

Resistive switching effect in HfxAl1−xOy with a graded Al depth profile studied by hard X-ray photoelectron spectroscopy

Yu. Matveyev, A. Markeev, Yu. Lebedinskii, A. Chouprik, K. Egorov, W. Drube, A. Zenkevich

20 page

Moscow Institute of Physics and Technology