The laboratory conducts experimental research of new physical effects in nanoscale structures based on inorganic materials, which can be used to develop synthetic multifunctional devices. Devices of this type are an alternative approach to creating computational systems and next-generation information technology.
Main lines of research:
• Development of methods for synthesizing new functional materials in nanoscale layers and multilayer structures with potential applications in nanoelectronic devices.
• Work on new physical principles for writing and storing information to create new energy-independent memory devices.
• Development of the physical and technological basis for the creation of innovative energy-independent memory devices based on ultrathin layers of new ferroelectric materials.
• Creation of prototype memory devices based on reversible switching in metal-insulator-metal nanostructures.
• Usage of multilevel resistive switching in memristors to create inorganic analogs of biological synapses. Development of neuromorphic chips for modeling parallel computing architecture in artificial neural networks.