2d Materials' Optoelectronics Lab

The laboratory of 2D materials' optelectronics was created in April, 2016 in the framework of the MIPT program for promotion of competitiveness 5-100. Since October, 2016 the laboratory became a part of the MIPT center of nanoscale optoelectronics. The laboratory aims at investigating optical and electrical properties of 2D materials for further creation of optoelectronic devices with unique properties on their basis.

Dmitry Svintsov

Head of 2d Materials' Optoelectronics Lab

Professional experience
Senior researcher - head of laboratory. MIPT graduate (2011) Ph.D. (IPT RAS, 2012), thesis "Kinetic phenomena in structures based on graphene and its modifications" 

Main publications 

2016 D. Svintsov, Zh. Devizorova, T. Otsuji, V. Ryzhii “Plasmons in tunnel-coupled graphene layers: backward waves with quantum cascade gain”, Phys. Rev. B 94, p. 115301 (2016). G. Alymov, V. Vyurkov, V.Ryzhii, D. Svintsov “Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities”, Scientific Reports 6, p. 24654 (2016). 

V. Ryzhii, T. Otsuji, M. Ryzhii, V.Ya. Aleshkin, A.A. Dubinov, D. Svintsov, V. Mitin, M.S. Shur “Graphene vertical cascade interband terahertz and infrared photodetectors”, 2D Materials 2, 025002 (2015) D. Svintsov, T. Otsuji, V. Mitin, M.S. Shur, V. Ryzhii “Negative terahertz conductivity in disordered graphene bilayers with population inversion”, Applied Physics Letters 106 p. 113501 (2015) D. Svintsov, A. Arsenin, D.Yu. Fedyanin “Full loss compensation in hybrid plasmonic waveguides under electrical pumping” Optics Express 23, Iss. 15, p. 19358 (2015) 

D. Svintsov, V. Vyurkov, A. Orlikovsky, V. Ryzhii and T. Otsuji “All-graphene field-effect transistor based on lateral tunnelling”, Journal of Physics D: Applied Physics 47, p. 094002 (2014) D. Svintsov, V. Ryzhii, A. Satou, T. Otsuji, V. Vyurkov “Carrier-carrier scattering and negative dynamic conductivity in pumped graphene”, Optics Express 22, Issue 17, pp. 19873-19886 (2014) D. Svintsov, V. Leiman, V. Ryzhii, T. Otsuji, M. Shur “Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation”,Journal of Physics D: Applied Physics 47, p. 505105 (2014) D. Svintsov, V. Ryzhii, T. Otsuji “Negative dynamic Drude conductivity in pumped graphene”, Applied Physics Express 7, p. 115101(2014) D. Svintsov, V. Vyurkov, S. Yurchenko, V. Ryzhii, T. Otsuji “Terahertz and infrared surface plasmon-polaritons in double-graphene layer structures”, Journal of Physics: Conference Series 486, 012023 (2014) 

D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji “Voltage-controlled surface plasmon-polaritons in double graphene layer structures”, Journal of Applied Physics 113, p. 053701 (2013) V. Ryzhii, I. Semenikhin, M. Ryzhii, D. Svintsov, V. Vyurkov, A. Satou, and T. Otsuji “Double injection in graphene p-i-n structures”, Journal of Applied Physics113, p. 244505 (2013) D. Svintsov, V. Vyurkov, V. Lukichev, A. Orlikovsky, A. Burenkov, R. Oechsner“Tunnel Field-Effect Transistors with Graphene Channels”, Semiconductors 47, p. 279 (2013). D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji “Hydrodynamic electron transport and nonlinear waves in graphene”, Physical Review B 88, p. 245444 (2013)  

D. Svintsov, V. Vyurkov, S. Yurchenko, V. Ryzhii, T. Otsuji "Hydrodynamic model for electron-hole plasma in graphene", Journal of Applied Physics 111, p. 083715 (2012)  

D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji "Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics", Japanese Journal of Applied Physics 50, Iss. 7, p. 070112 (2011)
Academic Interests
Graphene, plasmonics, semiconductor devices
Tohoku University

Rensselaer Polytechnic Institute, Troy, USA