​Laboratory of 2D Materials for Optoelectronics

The ​Laboratory of 2D Materials for Optoelectronics was created in April, 2016 in the framework of the MIPT program for promotion of competitiveness 5-100. Since October, 2016 the laboratory became a part of the MIPT center of nanoscale optoelectronics. The laboratory aims at investigating optical and electrical properties of 2D materials for further creation of optoelectronic devices with unique properties on their basis..

The 2D Optoelectronics Lab was established in April 2016 under the Top 5-100 Competitiveness Enhancement Programme implemented by Moscow Institute of Physics and Technology. 

The Lab is engaged in research of optical and electronic properties of 2D materials to create unparalleled optoelectronic devices. The Lab focuses on such 2D systems as graphene, chalcogenide monolayers of transition metals, mercury telluride quantum wells, etc. The main applications of such materials are far-IR and THz emitters and supersensitive detectors.

There are both practical and theoretical researchers on the team who can solve the most complex problems. The Lab partners with the global leading 2D system physics research centres: the University of Manchester (UK), MIT (USA), Tohoku University (Japan.) Within MIPT, the Lab is a division of the Centre for Photonics and 2D Materials and have access to one-of-a-kind optical, electronic, measuring instruments, and manufacturing equipment. 

For four years, the Lab researchers have published over 20 papers in top-rated journals including Physical Review Letters and Nature Communication. In collaboration with Russian and international colleagues, the team has developed the first graphene plasmon-assisted resonant THz radiation detector. The Lab short-term plans cover the development and manufacturing of IR detectors for heat imaging applications, and creating electrically controlled THz emitters.

Dmitry Svintsov

Head of laboratory, senior researcher

Education
2011 — MIPT graduate
2012 — PhD (IPT RAS) in physics and mathematics, thesis "Kinetic phenomena in structures based on graphene and its modifications"
Professional experience
Senior researcher and head of the laboratory. 
Academic Interests
Graphene, plasmonics, semiconductor devices

Main publications
2017
V. Enaldiev, A. Bylinkin, D. Svintsov “Plasmon-assisted resonant tunneling in graphene-based heterostructures”, Physical Review B 96,  p.12543 (2017)
A. Petrov, D. Svintsov, V. Ryzhii, M. Shur "Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals", Physical Review B 95, 045405 (2017)
V.Ryzhii, M.Ryzhii, D.Svintsov, V.Leiman, V.Mitin, M.S.Shur, T.Otsuji "Infrared photodetectors based on graphene van der Waals heterostructures", Infrared Physics and Technology 84, p. 72-81 (2017)

2016
A.A. Dubinov, A. Bylinkin, V.Ya. Aleshkin, V. Ryzhii, T. Otsuji, and D. Svintsov “Ultra-compactinjection terahertz laser using the resonant inter-layer radiative transitionsin multi-graphene-layer structure” Optics Express 24, pp. 29603-29612 (2016)
D. Svintsov, Zh. Devizorova, T. Otsuji, V. Ryzhii “Plasmons in tunnel-coupled graphene layers: backward waves with quantum cascade gain”, Phys. Rev. B 94, p. 115301 (2016). G. Alymov, V. Vyurkov, V.Ryzhii, D. Svintsov “Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities”, Scientific Reports 6, p. 24654 (2016)

2015 
V. Ryzhii, T. Otsuji, M. Ryzhii, V.Ya. Aleshkin, A.A. Dubinov, D. Svintsov, V. Mitin, M.S. Shur “Graphene vertical cascade interband terahertz and infrared photodetectors”, 2D Materials 2, 025002 (2015)
D. Svintsov, T. Otsuji, V. Mitin, M.S. Shur, V. Ryzhii “Negative terahertz conductivity in disordered graphene bilayers with population inversion”, Applied Physics Letters 106 p. 113501 (2015)
D. Svintsov, A. Arsenin, D.Yu. Fedyanin “Full loss compensation in hybrid plasmonic waveguides under electrical pumping” Optics Express 23, Iss. 15, p. 19358 (2015) 

2014 
D. Svintsov, V. Vyurkov, A. Orlikovsky, V. Ryzhii and T. Otsuji “All-graphene field-effect transistor based on lateral tunnelling”, Journal of Physics D: Applied Physics 47, p. 094002 (2014)
D. Svintsov, V. Ryzhii, A. Satou, T. Otsuji, V. Vyurkov “Carrier-carrier scattering and negative dynamic conductivity in pumped graphene”, Optics Express 22, Issue 17, pp. 19873-19886 (2014)
D. Svintsov, V. Leiman, V. Ryzhii, T. Otsuji, M. Shur “Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation”,Journal of Physics D: Applied Physics 47, p. 505105 (2014)
D. Svintsov, V. Ryzhii, T. Otsuji “Negative dynamic Drude conductivity in pumped graphene”, Applied Physics Express 7, p. 115101(2014)
D. Svintsov, V. Vyurkov, S. Yurchenko, V. Ryzhii, T. Otsuji “Terahertz and infrared surface plasmon-polaritons in double-graphene layer structures”, Journal of Physics: Conference Series 486, 012023 (2014) 

2013
D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji “Voltage-controlled surface plasmon-polaritons in double graphene layer structures”, Journal of Applied Physics 113, p. 053701 (2013)
V. Ryzhii, I. Semenikhin, M. Ryzhii, D. Svintsov, V. Vyurkov, A. Satou, and T. Otsuji “Double injection in graphene p-i-n structures”, Journal of Applied Physics113, p. 244505 (2013)
D. Svintsov, V. Vyurkov, V. Lukichev, A. Orlikovsky, A. Burenkov, R. Oechsner “Tunnel Field-Effect Transistors with Graphene Channels”, Semiconductors 47, p. 279 (2013)
D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji “Hydrodynamic electron transport and nonlinear waves in graphene”, Physical Review B 88, p. 245444 (2013)  

2012 
D. Svintsov, V. Vyurkov, S. Yurchenko, V. Ryzhii, T. Otsuji "Hydrodynamic model for electron-hole plasma in graphene", Journal of Applied Physics 111, p. 083715 (2012)  

2011 
D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji "Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics", Japanese Journal of Applied Physics 50, Iss. 7, p. 070112 (2011)
Publications

2016, Proceedings of SPIE

Single-electron solitons in magnetic field

Vladimir Leiman

Deputy head of laboratory, chief researcher

Education

ScD in physics and mathematics

Viktor Ryzhii

Сhief researcher, scientific adviser

Education

1987 — corresponding member of the Russian Academy of Sciences (RAS)

1976 — higher doctorate (ScD) in physics and mathematics

1967 — MIPT graduate

1970 — PhD in physics and mathematics


Professional experience

1970-1979 — assistant, associate professor at MIPT

1979-1986 — head of department at the Research Institute of Physical Problems of the Soviet Ministry of the Electronics Industry

1986-1988 — senior researcher, head of laboratory at the Institute of General Physics of the Soviet Academy of Sciences

1988-1993 — deputy director of science at the Institute of Physics and Technology of the Soviet Academy of Sciences

1993-1996 — scientific adviser at the Microel Research Center

1996-2012 — professor at the University of Aizu (Japan)

2012-present — visiting professor at the Tohoku University (Japan)

2013-2014 — head of laboratory at the Institute of Ultra-High Frequency Semiconductor Electronics, RAS

2014-present — chief researcher at the Institute of Ultra-High Frequency Semiconductor Electronics, RAS

2016-present — chief researcher at MIPT

ISI Web of Science: 432 search results, over 5,700 citations, highest number of citations — 269, h-index — 40

Academic Interests
Physics of semiconductors, mathematical modeling of physical processes in nano- and microsemiconductors

Main publications
2016 

Y. Koseki, V. Ryzhii, T. Otsuji, V. V. Popov, and A. Satou "Giant plasmon instability in a dual-grating-gate graphene field-effect transistor" Phys. Rev. B 93, 245408 (2016). 

2015

V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin and M. S. Shur “Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors”  J. Appl. Phys. 118, 204501 (2015)

V. Aleshkin, A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji “Electron Capture in van der Waals Graphene-Based Heterostructures with WS2 Barrier Layers” J. Phys. Soc. Jpn. 84, 094703 (2015)

2014

V. Ryzhii, T. Otsuji, V. Ya. Aleshkin, A. A. Dubinov, M. Ryzhii, V. Mitin and M. S. Shur “Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures” Appl. Phys. Lett. 104, 163505 (2014)

A. Satou, Y. Koseki, V. Ryzhii, V. Vyurkov and T. Otsuji “Damping mechanism of terahertz plasmons in graphene on heavily doped substrate” J. Appl. Phys. 115, 104501 (2014)

T. Otsuji, V. Popov and V. Ryzhii “Active graphene plasmonics for terahertz device applications” Journal of Physics D: Applied Physics 47 (2014)

2012

S. Boubanga-Tombet, S. Chan, T. Watanabe, A. Satou, V. Ryzhii, and T. Otsuji "Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature" Phys. Rev. B 85, 035443

V. Ryzhii, T. Otsuji, M. Ryzhii and M.S. Shur "Double graphene-layer plasma resonances terahertz detector"  Journal of Physics D: Applied Physics 45 (2012) 

2011 
A. Dubinov, V. Aleshkin, V. Mitin, T. Otsuji and V. Ryzhii "Terahertz surface plasmons in optically pumped graphene structures" Journal of Physics: Condensed Matter 23, (2011). 

2008

V. Ryzhii, A. Satou, M. Ryzhii, T. Otsuji, and M.S. Shur “Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gatedelectron channels” Journal of Physics: Condensed Matter 20 (2008)

2007 

V. Ryzhii, M. Ryzhii and T. Otsuji "Negative dynamic conductivity of graphene with optical pumping" J. Appl. Phys. 101, 083114 (2007)
V. Ryzhii, A. Satou and T. Otsuji "Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures" J. Appl. Phys. 101, 024509 (2007)
F. T. Vasko and V. Ryzhii "Voltage and temperature dependencies of conductivity in gated graphene" Phys. Rev. B 76, 233404

Alexander Dubinov

Researcher

Education

PhD in physics and mathematics

Vladimir Enaldiev

Researcher

Education
Doctoral student at a RAS institute

Georgiy Alymov

Researcher

Education

Doctoral student at MIPT

MIPT graduate, School of Physical and Quantum Electronics (2016). Graduation project: A Tunnel Transistor with Two-Layer Graphene with High Gain Slope

Alexander Petrov

Doctoral Student

Education
Second year master’s degree student at the Department of Molecular and Chemical Physics, MIPT
Professional experience

1st year doctorate student, School of Fundamental and Applied Physics, MIPT





Academic Interests
Plasmonics, terahertz emitters based on MOSFETs

Andrei Bylinkin

Graduate student

Education
Second year master’s degree student at the Department of Physical and Quantum Electronics, MIPT
Professional experience

6th year graduate student, School of Fundamental and Applied Physics, MIPT



Academic Interests
Resonant tunneling, quantum cascade lasers, graphene

Vladimir Kaydashev

Senior Research Fellow

Education
2004 Bachelor degree Rostov State University, Physics Faculty, Department of Quantum Radiophysics 4.98, degree with honors. 
2006 Master degree Rostov State University, Physics Faculty, Department of Quantum Radiophysics 4.98, degree with honors. 
2010. PhD Southern Federal University, thesis in physicomathematical sciences, speciality 01.04.03 – radiophysics, on a topic “Pulsed laser deposition and investigation of hybrid structures based on semiconductor nanorods and films”.

Professional experience

Researcher ID: B-7382-2016
Academic Interests
Plasmonics, nanoclusters, nonlinear optics, plasmon-coupled nanosystems

Mikhail Kashchenko

Research Fellow

Education
PhD (Phys&Math), 2016
Professional experience
RBRF 18-32-00986 High-Definition IR Spectroscopy of Two-Layer Boron Nitride Encapsulated Graphene
Academic Interests
IR spectroscopy, Van der Waals heterostructures

Zhanna Devizorova

Research Fellow

Education
PhD (Phys&Math), 2018 
Professional experience



Academic Interests

Superconductivity, ferromagnetism, proximity effect in hybrid ferromagnetic-superconductor structures, Josephson junctions, spintronics


Alexander Afanasiev

Engineer

Education
Doctorate student, Ioffe Institute
Professional experience

 

Academic Interests
Heterostructures, Weyl semimetals, impact ionisation

Elena Titova

Engineer

Professional experience

6th year graduate student, School of Fundamental and Applied Physics, MIPT


Academic Interests
2D materials, nanostructures 

Kirill Kapralov

Graduate Student

Professional experience

4th year graduate student, School of Fundamental and Applied Physics, MIPT

Academic Interests
Active plasmonics, heterostructures, non-equilibrium phenomena in semiconductors
Tohoku University

Rensselaer Polytechnic Institute, Troy
USA
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