​Laboratory of 2-D Materials for Optoelectronics

The laboratory of 2D materials' optelectronics was created in April, 2016 in the framework of the MIPT program for promotion of competitiveness 5-100. Since October, 2016 the laboratory became a part of the MIPT center of nanoscale optoelectronics. The laboratory aims at investigating optical and electrical properties of 2D materials for further creation of optoelectronic devices with unique properties on their basis.

The Laboratory of 2-D Materials for Optoelectronics is currently engaged in a number of projects with a focus on:

  •   Plasmon sources and terahertz emission detectors based on 2-D electronic systems.

The lab works on plasmon instability theory and the generation of terahertz emission in new 2-D materials.

  •   Nanoscale photon and surface plasmon sources based on resonant tunneling.

This includes research into resonant tunneling in the so-called Van der Waals heterostructures.

  •   The theory of laser generation in narrow-bandgap semiconductors.

The laboratory investigates laser generation in graphene, including research on optical amplification and absorption, emissionless recombination, and off-balance charge carrier kinetics.

  •   Graphene and its optical and electronic properties.

We conduct experiments to study the optical and transport properties of graphene to enable optoelectronic devices based on this material.

Dmitry Svintsov

Head of laboratory, senior researcher

2011 — MIPT graduate
2012 — PhD (IPT RAS) in physics and mathematics, thesis "Kinetic phenomena in structures based on graphene and its modifications"
Professional experience
Senior researcher and head of the laboratory. 
Academic Interests
Graphene, plasmonics, semiconductor devices

Main publications
V. Enaldiev, A. Bylinkin, D. Svintsov “Plasmon-assisted resonant tunneling in graphene-based heterostructures”, Physical Review B 96,  p.12543 (2017)
A. Petrov, D. Svintsov, V. Ryzhii, M. Shur "Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals", Physical Review B 95, 045405 (2017)
V.Ryzhii, M.Ryzhii, D.Svintsov, V.Leiman, V.Mitin, M.S.Shur, T.Otsuji "Infrared photodetectors based on graphene van der Waals heterostructures", Infrared Physics and Technology 84, p. 72-81 (2017)

A.A. Dubinov, A. Bylinkin, V.Ya. Aleshkin, V. Ryzhii, T. Otsuji, and D. Svintsov “Ultra-compactinjection terahertz laser using the resonant inter-layer radiative transitionsin multi-graphene-layer structure” Optics Express 24, pp. 29603-29612 (2016)
D. Svintsov, Zh. Devizorova, T. Otsuji, V. Ryzhii “Plasmons in tunnel-coupled graphene layers: backward waves with quantum cascade gain”, Phys. Rev. B 94, p. 115301 (2016). G. Alymov, V. Vyurkov, V.Ryzhii, D. Svintsov “Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities”, Scientific Reports 6, p. 24654 (2016)

V. Ryzhii, T. Otsuji, M. Ryzhii, V.Ya. Aleshkin, A.A. Dubinov, D. Svintsov, V. Mitin, M.S. Shur “Graphene vertical cascade interband terahertz and infrared photodetectors”, 2D Materials 2, 025002 (2015)
D. Svintsov, T. Otsuji, V. Mitin, M.S. Shur, V. Ryzhii “Negative terahertz conductivity in disordered graphene bilayers with population inversion”, Applied Physics Letters 106 p. 113501 (2015)
D. Svintsov, A. Arsenin, D.Yu. Fedyanin “Full loss compensation in hybrid plasmonic waveguides under electrical pumping” Optics Express 23, Iss. 15, p. 19358 (2015) 

D. Svintsov, V. Vyurkov, A. Orlikovsky, V. Ryzhii and T. Otsuji “All-graphene field-effect transistor based on lateral tunnelling”, Journal of Physics D: Applied Physics 47, p. 094002 (2014)
D. Svintsov, V. Ryzhii, A. Satou, T. Otsuji, V. Vyurkov “Carrier-carrier scattering and negative dynamic conductivity in pumped graphene”, Optics Express 22, Issue 17, pp. 19873-19886 (2014)
D. Svintsov, V. Leiman, V. Ryzhii, T. Otsuji, M. Shur “Graphene nanoelectromechanical resonators for detection of modulated terahertz radiation”,Journal of Physics D: Applied Physics 47, p. 505105 (2014)
D. Svintsov, V. Ryzhii, T. Otsuji “Negative dynamic Drude conductivity in pumped graphene”, Applied Physics Express 7, p. 115101(2014)
D. Svintsov, V. Vyurkov, S. Yurchenko, V. Ryzhii, T. Otsuji “Terahertz and infrared surface plasmon-polaritons in double-graphene layer structures”, Journal of Physics: Conference Series 486, 012023 (2014) 

D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji “Voltage-controlled surface plasmon-polaritons in double graphene layer structures”, Journal of Applied Physics 113, p. 053701 (2013)
V. Ryzhii, I. Semenikhin, M. Ryzhii, D. Svintsov, V. Vyurkov, A. Satou, and T. Otsuji “Double injection in graphene p-i-n structures”, Journal of Applied Physics113, p. 244505 (2013)
D. Svintsov, V. Vyurkov, V. Lukichev, A. Orlikovsky, A. Burenkov, R. Oechsner “Tunnel Field-Effect Transistors with Graphene Channels”, Semiconductors 47, p. 279 (2013)
D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji “Hydrodynamic electron transport and nonlinear waves in graphene”, Physical Review B 88, p. 245444 (2013)  

D. Svintsov, V. Vyurkov, S. Yurchenko, V. Ryzhii, T. Otsuji "Hydrodynamic model for electron-hole plasma in graphene", Journal of Applied Physics 111, p. 083715 (2012)  

D. Svintsov, V. Vyurkov, V. Ryzhii, T. Otsuji "Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics", Japanese Journal of Applied Physics 50, Iss. 7, p. 070112 (2011)

Vladimir Leiman

Deputy head of laboratory, chief researcher


ScD in physics and mathematics

Viktor Ryzhii

Сhief researcher, scientific adviser


1987 — corresponding member of the Russian Academy of Sciences (RAS)

1976 — higher doctorate (ScD) in physics and mathematics

1967 — MIPT graduate

1970 — PhD in physics and mathematics

Professional experience

1970-1979 — assistant, associate professor at MIPT

1979-1986 — head of department at the Research Institute of Physical Problems of the Soviet Ministry of the Electronics Industry

1986-1988 — senior researcher, head of laboratory at the Institute of General Physics of the Soviet Academy of Sciences

1988-1993 — deputy director of science at the Institute of Physics and Technology of the Soviet Academy of Sciences

1993-1996 — scientific adviser at the Microel Research Center

1996-2012 — professor at the University of Aizu (Japan)

2012-present — visiting professor at the Tohoku University (Japan)

2013-2014 — head of laboratory at the Institute of Ultra-High Frequency Semiconductor Electronics, RAS

2014-present — chief researcher at the Institute of Ultra-High Frequency Semiconductor Electronics, RAS

2016-present — chief researcher at MIPT

ISI Web of Science: 432 search results, over 5,700 citations, highest number of citations — 269, h-index — 40

Academic Interests
Physics of semiconductors, mathematical modeling of physical processes in nano- and microsemiconductors

Main publications

Y. Koseki, V. Ryzhii, T. Otsuji, V. V. Popov, and A. Satou "Giant plasmon instability in a dual-grating-gate graphene field-effect transistor" Phys. Rev. B 93, 245408 (2016). 


V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin and M. S. Shur “Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors”  J. Appl. Phys. 118, 204501 (2015)

V. Aleshkin, A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji “Electron Capture in van der Waals Graphene-Based Heterostructures with WS2 Barrier Layers” J. Phys. Soc. Jpn. 84, 094703 (2015)


V. Ryzhii, T. Otsuji, V. Ya. Aleshkin, A. A. Dubinov, M. Ryzhii, V. Mitin and M. S. Shur “Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures” Appl. Phys. Lett. 104, 163505 (2014)

A. Satou, Y. Koseki, V. Ryzhii, V. Vyurkov and T. Otsuji “Damping mechanism of terahertz plasmons in graphene on heavily doped substrate” J. Appl. Phys. 115, 104501 (2014)

T. Otsuji, V. Popov and V. Ryzhii “Active graphene plasmonics for terahertz device applications” Journal of Physics D: Applied Physics 47 (2014)


S. Boubanga-Tombet, S. Chan, T. Watanabe, A. Satou, V. Ryzhii, and T. Otsuji "Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature" Phys. Rev. B 85, 035443

V. Ryzhii, T. Otsuji, M. Ryzhii and M.S. Shur "Double graphene-layer plasma resonances terahertz detector"  Journal of Physics D: Applied Physics 45 (2012) 

A. Dubinov, V. Aleshkin, V. Mitin, T. Otsuji and V. Ryzhii "Terahertz surface plasmons in optically pumped graphene structures" Journal of Physics: Condensed Matter 23, (2011). 


V. Ryzhii, A. Satou, M. Ryzhii, T. Otsuji, and M.S. Shur “Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gatedelectron channels” Journal of Physics: Condensed Matter 20 (2008)


V. Ryzhii, M. Ryzhii and T. Otsuji "Negative dynamic conductivity of graphene with optical pumping" J. Appl. Phys. 101, 083114 (2007)
V. Ryzhii, A. Satou and T. Otsuji "Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures" J. Appl. Phys. 101, 024509 (2007)
F. T. Vasko and V. Ryzhii "Voltage and temperature dependencies of conductivity in gated graphene" Phys. Rev. B 76, 233404

Alexander Dubinov



PhD in physics and mathematics

Vladimir Enaldiev


Doctoral student at a RAS institute

Georgiy Alymov



Doctoral student at MIPT

Master’s degree from MIPT’s Department of Physical and Quantum Electronics for the thesis “Tunnel transistor based on bilayer graphene with high characteristic steepness”

Alexander Petrov

Graduate student

Second year master’s degree student at the Department of Molecular and Chemical Physics, MIPT

Andrei Bylinkin

Graduate student

Second year master’s degree student at the Department of Physical and Quantum Electronics, MIPT
Tohoku University

Rensselaer Polytechnic Institute, Troy, USA