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Yury Matveyev

Education:

Graduated for departments of Laser Physics, NRNU “Moscow Engineering Physics Institute” in 2008. Master thesis: “Investigation of electronic properties of ultrathin metal/dielectric layers by x-ray photoelectron spectroscopy”"

In 2011 defended his PhD thesis at the department of Solid-state physics and nanosystems, NRNU “Moscow Engineering Physics Institute”. Thesis title: “Investigation of electronic and electrical properties at the dielectric\metal interfaces (dielectric=HfO₂, LaAlO₃, Al₂O₃; metal=Au, Ni, Al, Fe, Gd)””

Career:

• 2014-present:senior researcher, laboratory “Functional materials and devices for nanoelectronic“, Moscow Institute of Physics and Technology
• 2014-present: member of Mössbauer Collaboration at ISOLDE, CERN (Geneva, Switzerland) (sample fabrication, data analysis; participation in experiments), e-MS collobaration at ISOLDE
• 2010-present: member of the team (sample preparation, data analysis; participation in experiments) performing experiments at hard X-ray photoelectron spectroscopy (HAXPES) stations at DESY (Hamburg, Germany)
• 2011-2014: Post-doc, laboratory “Functional materials for nanoelectronics”, Department of Solid State Physics, NRNU “Moscow Engineering Physics Institute”
• 2008-2011: Ph.D. student in laboratory “Functional materials for nanoelectronics”, Department of Solid State Physics, NRNU “Moscow Engineering Physics Institute”.

Awards, Fellowships and Grants:

• K. Alex Muller Award for one of the best fellows of IBM Ph.D. Fellowship in Middle and East Europe in 2011
• IBM Ph.D. Fellowship for the 2010-2011 Academic Year. This program honours exceptional Ph.D. students who have an interest in solving problems of interest to IBM and which are fundamental to innovation
• Personal grant of Russian president “Synthesis and study of solid-state elements neuromorphic systems” in 2013-2014 years
• Personal fellowship of Russian federal agency of education “Prototyping the inorganic synapse on the basis of functional oxide nanostructures” in 2011-2012 years
• Personal fellowship of Russian federal agency of education “Investigation of electrical and electrical properties of metal/dielectric interfaces in HfO2, LaAlO3 based MOS-stack” in 2009-2010 years

Publications:

1. A. Chernikova, M. Kozodaev, A. Markeev, Yu. Matveev, D. Negrov, O. Orlov, “Confinement-free annealing induced ferroelectricity in Hf_0.5Zr_0.5O₂ thin films”, Microel. Eng., vol. 147 (2015), p. 15
2. Yu. Matveyev, K. Egorov, A. Markeev and A. Zenkevich, “Resistive switching and synaptic properties of fully ALD grown TiN/HfO₂/TiN devices”, J. of Appl. Phys., vol. 117 (2015), 044901
3. K.V. Egorov, R.V. Kirtaev, Yu.Yu. Lebedinskii, A.M. Markeev, Yu.A. Matveyev, O.O. Orlov, A.V. Zablotskiy and A.V. Zenkevich “Complementary and bipolar regimes of resistive switching in fully ALD grown TiN/HfO2/TiN MIM-stacks”, Phys. Stat. Sol. A, vol. 212 (2014), p. 809-816
4. A. Zenkevich, Yu. Matveyev, K. Maksimova, R. Gaynutdinov, A.Tolstikhina, V. Fridkin, “Giant Bulk Photovoltaic Effect in Thin Ferroelectric BaTiO3 Films”, Phys. Rev. B, vol 90 (2014), p 161409(R)
5. Yu. Matveyev, Yu. Lebedinskii; K. Egorov, A. Zenkevich, A. Markeev, W. Drube, A. Chouprik “Resistive switching effect in HfxAl1-xOy oxide with graded Al depth profile studied by hard X-ray photoelectron spectroscopy”, Thin Solid Films, vol. 563 (2014), pp. 20-23
6. A. Zenkevich, Yu. Matveyev, M. Minnekaev, Y. Lebedinskii, S. Thiess, W. Drube “Electronic and electrical properties of functional interfaces studied by hard X-ray photoemission”, J. Electron. Spectrosc. Relat. Phenom., vol. 190B (2013), pp. 302-308
7. A. Zenkevich, M. Minnekaev, Yu. Matveyev, Yu. Lebedinskii, K. Bulakh, A. Chouprik, A. Baturin, S. Thiess and W. Drube, “Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions”, Appl. Phys Lett., vol 102 (2013), p. 062907
8. A. Zenkevich, Yu. Matveyev, Yu. Lebedinskii, R. Mantovan, M. Fanciulli, S. Thiess, and W. Drube, “The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si”, J. Appl. Phys., vol. 111 (2012), id 07C506
9. A. Zenkevich, R. Mantovan, M. Fanciulli, M. Minnekaev, Yu. Matveyev, Yu. Lebedinskii, S. Thiess, and W. Drube, “Fe/BaTiO3 interface: Band alignment and chemical properties”, Appl. Phys Lett., vol. 99 (2011), id 182905
10. Yu. Matveyev, A. Zenkevich, Yu Lebedinskii, S. Thiess, W. Drube, “Effect of biasing at elevated temperature on the electronic structure of Pt/HfO2/Si stacks”, Microel. Eng., vol. 88 (2011), p. 1353.
11. A. P. Alekhin, A. A. Chouprik, S. A. Gudkova, A. M. Markeev, Yu. Yu. Lebedinskii, Yu. A. Matveyev, and A. V. Zenkevich, «Structural and electrical properties of TixAl1−xOy thin films grown by atomic layer deposition», J. Vac. Sci. Technol. B, vol. 29 (2011), id 01A302
12. K. Yu. Maksimova, Yu.A. Matveyev, A.V. Zenkevich, V.N. Nevolin, A.G. Novikov, P.I. Gaidyk, A.S. Orekxov, “Investigation of the nanocomposited structures SiO2:Me formed by metal segregation driven by Si oxidation front in Si:Me layers”, Perspective Materials, vol. 2 (2010), pp. 33-38
13. A.V. Zenkevich, Yu.Yu. Lebedinskii, Y.A. Matveyev, N.C. Barantsev, Y.A. Voronov, A.V. Sogoyan, V.N. Nevolin, V.I. Chichkov, S. Spiga, M. Fanciulli “Growth and investigation of novel materials applicable in CMOS technologies of nanoelectronics”, Russian Microelectronics, vol. 39 (2010), p. 184
14. M.A. Lapshina, D.O. Filatov, M.A. Isakov, S.V. Tixov, Y.A. Matveyev, A.V. Zenkevich “Investigation of HfO2/SiO2/n-Si(001) MOS-structure by ballistic electron emission microscopy”. J. of Surface Investigation, vol. 5 (2010), p. 57
15. A. Zenkevich, Yu. Lebedinskii, Yu. Matveyev, S. Spiga, L. Lamagna and M. Fanciulli “Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS”. Microel. Eng., vol. 86 (2009), p. 1777
16. Congedo G., Spiga S., Lamanga L., Lamperti A., Lebedinskii Yu., Matveyev Yu., Zenkevich A., Chernykh P., Fanciulli M. “Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100)” Microel. Eng., vol. 86 (2009), p. 1696

Patents:

1. Application for a patent in Russia №2012150774, 28.11.2012, A.V. Zenkevich, Y.A. Matveyev, “The method of the memristor formation using Si:Au solid alloy and the memristor structure”
2. Patent application in Russia №2008138892, 30.09.2008. A.V. Zenkevich, Yu. Yu. Lebedinski, Y.A. Matveyev, V. N. Nevolin. “The method of the MOSFET formation using high-k metal oxide dielectrics and metal gates, and the MOSFET structure.”
3. 3. Patent application in Russia №2008139703, 06.10.2008. A.V. Zenkevich, Yu. Yu. Lebedinski, Y.A. Matveyev, V. N. Nevolin “The method of the MOSFET formation using high-k metal oxide dielectrics and metal gates (alternatives)”

Overall amount of conferences contributions – 49

Personally presented: oral – 21; poster – 8

Presented by co-authors: oral – 11; poster – 9