E-mail address:

    Yury Matveyev

    Foto of Yury Matveyev

    ORCID: 0000-0001-7661-8462

    ResearcherID: E-2700-2014

    Scopus Author ID: 36957066700

    e-mail:matveyev.ya@mipt.ru

    Senior researcher, Ph.D.

    Area of scientific interests: Synthesis of novel functional materials for nanoelectronics in ultrathin films and investigation of their chemical and electrical properties in multilayered structures. In particular, since 2010 – investigation of resistive switching devices for non-volatile memory and neuromorphic application 


    Education:

    Graduated for departments of Laser Physics, NRNU “Moscow Engineering Physics Institute” in 2008. Master thesis: “Investigation of electronic properties of ultrathin metal/dielectric layers by x-ray photoelectron spectroscopy”"

    In 2011 defended his PhD thesis at the department of Solid-state physics and nanosystems, NRNU “Moscow Engineering Physics Institute”. Thesis title: “Investigation of electronic and electrical properties at the dielectric\metal interfaces (dielectric=HfO2, LaAlO3, Al2O3; metal=Au, Ni, Al, Fe, Gd)”

    Career:

    Awards, Fellowships and Grants:

    Publications:

    1. A. Chernikova, M. Kozodaev, A. Markeev, Yu. Matveev, D. Negrov, O. Orlov, “Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films”, Microel. Eng., vol. 147 (2015), p. 15
    2. Yu. Matveyev, K. Egorov, A. Markeev and A. Zenkevich, “Resistive switching and synaptic properties of fully ALD grown TiN/HfO2/TiN devices”, J. of Appl. Phys., vol. 117 (2015), 044901
    3. K.V. Egorov, R.V. Kirtaev, Yu.Yu. Lebedinskii, A.M. Markeev, Yu.A. Matveyev, O.O. Orlov, A.V. Zablotskiy and A.V. Zenkevich “Complementary and bipolar regimes of resistive switching in fully ALD grown TiN/HfO2/TiN MIM-stacks”, Phys. Stat. Sol. A, vol. 212 (2014), p. 809-816
    4. A. Zenkevich, Yu. Matveyev, K. Maksimova, R. Gaynutdinov, A.Tolstikhina, V. Fridkin, “Giant Bulk Photovoltaic Effect in Thin Ferroelectric BaTiO3 Films”, Phys. Rev. B, vol 90 (2014), p 161409(R)
    5. Yu. Matveyev, Yu. Lebedinskii; K. Egorov, A. Zenkevich, A. Markeev, W. Drube, A. Chouprik “Resistive switching effect in HfxAl1-xOy oxide with graded Al depth profile studied by hard X-ray photoelectron spectroscopy”, Thin Solid Films, vol. 563 (2014), pp. 20-23
    6. A. Zenkevich, Yu. Matveyev, M. Minnekaev, Y. Lebedinskii, S. Thiess, W. Drube “Electronic and electrical properties of functional interfaces studied by hard X-ray photoemission”, J. Electron. Spectrosc. Relat. Phenom., vol. 190B (2013), pp. 302-308
    7. A. Zenkevich, M. Minnekaev, Yu. Matveyev, Yu. Lebedinskii, K. Bulakh, A. Chouprik, A. Baturin, S. Thiess and W. Drube, “Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions”, Appl. Phys Lett., vol 102 (2013), p. 062907
    8. A. Zenkevich, Yu. Matveyev, Yu. Lebedinskii, R. Mantovan, M. Fanciulli, S. Thiess, and W. Drube, “The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si”, J. Appl. Phys., vol. 111 (2012), id 07C506
    9. A. Zenkevich, R. Mantovan, M. Fanciulli, M. Minnekaev, Yu. Matveyev, Yu. Lebedinskii, S. Thiess, and W. Drube, “Fe/BaTiO3 interface: Band alignment and chemical properties”, Appl. Phys Lett., vol. 99 (2011), id 182905
    10. Yu. Matveyev, A. Zenkevich, Yu Lebedinskii, S. Thiess, W. Drube, “Effect of biasing at elevated temperature on the electronic structure of Pt/HfO2/Si stacks”, Microel. Eng., vol. 88 (2011), p. 1353.
    11. A. P. Alekhin, A. A. Chouprik, S. A. Gudkova, A. M. Markeev, Yu. Yu. Lebedinskii, Yu. A. Matveyev, and A. V. Zenkevich, «Structural and electrical properties of TixAl1−xOy thin films grown by atomic layer deposition», J. Vac. Sci. Technol. B, vol. 29 (2011), id 01A302
    12. K. Yu. Maksimova, Yu.A. Matveyev, A.V. Zenkevich, V.N. Nevolin, A.G. Novikov, P.I. Gaidyk, A.S. Orekxov, “Investigation of the nanocomposited structures SiO2:Me formed by metal segregation driven by Si oxidation front in Si:Me layers”, Perspective Materials, vol. 2 (2010), pp. 33-38
    13. A.V. Zenkevich, Yu.Yu. Lebedinskii, Y.A. Matveyev, N.C. Barantsev, Y.A. Voronov, A.V. Sogoyan, V.N. Nevolin, V.I. Chichkov, S. Spiga, M. Fanciulli “Growth and investigation of novel materials applicable in CMOS technologies of nanoelectronics”, Russian Microelectronics, vol. 39 (2010), p. 184
    14. M.A. Lapshina, D.O. Filatov, M.A. Isakov, S.V. Tixov, Y.A. Matveyev, A.V. Zenkevich “Investigation of HfO2/SiO2/n-Si(001) MOS-structure by ballistic electron emission microscopy”. J. of Surface Investigation, vol. 5 (2010), p. 57
    15. A. Zenkevich, Yu. Lebedinskii, Yu. Matveyev, S. Spiga, L. Lamagna and M. Fanciulli “Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS”. Microel. Eng., vol. 86 (2009), p. 1777
    16. Congedo G., Spiga S., Lamanga L., Lamperti A., Lebedinskii Yu., Matveyev Yu., Zenkevich A., Chernykh P., Fanciulli M. “Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100)” Microel. Eng., vol. 86 (2009), p. 1696

    Patents:

    1. Application for a patent in Russia №2012150774, 28.11.2012, A.V. Zenkevich, Y.A. Matveyev, “The method of the memristor formation using Si:Au solid alloy and the memristor structure”
    2. Patent application in Russia №2008138892, 30.09.2008. A.V. Zenkevich, Yu. Yu. Lebedinski, Y.A. Matveyev, V. N. Nevolin. “The method of the MOSFET formation using high-k metal oxide dielectrics and metal gates, and the MOSFET structure.”
    3. 3. Patent application in Russia №2008139703, 06.10.2008. A.V. Zenkevich, Yu. Yu. Lebedinski, Y.A. Matveyev, V. N. Nevolin “The method of the MOSFET formation using high-k metal oxide dielectrics and metal gates (alternatives)”

    Overall amount of conferences contributions – 49

    Personally presented: oral – 21; poster – 8

    Presented by co-authors: oral – 11; poster – 9

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