Yury Matveyev

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ORCID: 0000-0001-7661-8462
ResearcherID: E-2700-2014
Scopus Author ID: 36957066700
e-mail:matveyev.ya@mipt.ru
Senior researcher, Ph.D.
Area of scientific interests: Synthesis of novel functional materials for nanoelectronics in ultrathin films and investigation of their chemical and electrical properties in multilayered structures. In particular, since 2010 – investigation of resistive switching devices for non-volatile memory and neuromorphic application
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Education:
Graduated for departments of Laser Physics, NRNU “Moscow Engineering Physics Institute” in 2008. Master thesis: “Investigation of electronic properties of ultrathin metal/dielectric layers by x-ray photoelectron spectroscopy”"
In 2011 defended his PhD thesis at the department of Solid-state physics and nanosystems, NRNU “Moscow Engineering Physics Institute”. Thesis title: “Investigation of electronic and electrical properties at the dielectric\metal interfaces (dielectric=HfO2, LaAlO3, Al2O3; metal=Au, Ni, Al, Fe, Gd)””
Career:
- 2014-present:senior researcher, laboratory “Functional materials and devices for nanoelectronic“, Moscow Institute of Physics and Technology
- 2014-present: member of Mössbauer Collaboration at ISOLDE, CERN (Geneva, Switzerland) (sample fabrication, data analysis; participation in experiments), e-MS collobaration at ISOLDE
- 2010-present: member of the team (sample preparation, data analysis; participation in experiments) performing experiments at hard X-ray photoelectron spectroscopy (HAXPES) stations at DESY (Hamburg, Germany)
- 2011-2014: Post-doc, laboratory “Functional materials for nanoelectronics”, Department of Solid State Physics, NRNU “Moscow Engineering Physics Institute”
- 2008-2011: Ph.D. student in laboratory “Functional materials for nanoelectronics”, Department of Solid State Physics, NRNU “Moscow Engineering Physics Institute”.
Awards, Fellowships and Grants:
- K. Alex Muller Award for one of the best fellows of IBM Ph.D. Fellowship in Middle and East Europe in 2011
- IBM Ph.D. Fellowship for the 2010-2011 Academic Year. This program honours exceptional Ph.D. students who have an interest in solving problems of interest to IBM and which are fundamental to innovation
- Personal grant of Russian president “Synthesis and study of solid-state elements neuromorphic systems” in 2013-2014 years
- Personal fellowship of Russian federal agency of education “Prototyping the inorganic synapse on the basis of functional oxide nanostructures” in 2011-2012 years
- Personal fellowship of Russian federal agency of education “Investigation of electrical and electrical properties of metal/dielectric interfaces in HfO2, LaAlO3 based MOS-stack” in 2009-2010 years
Publications:
- A. Chernikova, M. Kozodaev, A. Markeev, Yu. Matveev, D. Negrov, O. Orlov, “Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films”, Microel. Eng., vol. 147 (2015), p. 15
- Yu. Matveyev, K. Egorov, A. Markeev and A. Zenkevich, “Resistive switching and synaptic properties of fully ALD grown TiN/HfO2/TiN devices”, J. of Appl. Phys., vol. 117 (2015), 044901
- K.V. Egorov, R.V. Kirtaev, Yu.Yu. Lebedinskii, A.M. Markeev, Yu.A. Matveyev, O.O. Orlov, A.V. Zablotskiy and A.V. Zenkevich “Complementary and bipolar regimes of resistive switching in fully ALD grown TiN/HfO2/TiN MIM-stacks”, Phys. Stat. Sol. A, vol. 212 (2014), p. 809-816
- A. Zenkevich, Yu. Matveyev, K. Maksimova, R. Gaynutdinov, A.Tolstikhina, V. Fridkin, “Giant Bulk Photovoltaic Effect in Thin Ferroelectric BaTiO3 Films”, Phys. Rev. B, vol 90 (2014), p 161409(R)
- Yu. Matveyev, Yu. Lebedinskii; K. Egorov, A. Zenkevich, A. Markeev, W. Drube, A. Chouprik “Resistive switching effect in HfxAl1-xOy oxide with graded Al depth profile studied by hard X-ray photoelectron spectroscopy”, Thin Solid Films, vol. 563 (2014), pp. 20-23
- A. Zenkevich, Yu. Matveyev, M. Minnekaev, Y. Lebedinskii, S. Thiess, W. Drube “Electronic and electrical properties of functional interfaces studied by hard X-ray photoemission”, J. Electron. Spectrosc. Relat. Phenom., vol. 190B (2013), pp. 302-308
- A. Zenkevich, M. Minnekaev, Yu. Matveyev, Yu. Lebedinskii, K. Bulakh, A. Chouprik, A. Baturin, S. Thiess and W. Drube, “Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions”, Appl. Phys Lett., vol 102 (2013), p. 062907
- A. Zenkevich, Yu. Matveyev, Yu. Lebedinskii, R. Mantovan, M. Fanciulli, S. Thiess, and W. Drube, “The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si”, J. Appl. Phys., vol. 111 (2012), id 07C506
- A. Zenkevich, R. Mantovan, M. Fanciulli, M. Minnekaev, Yu. Matveyev, Yu. Lebedinskii, S. Thiess, and W. Drube, “Fe/BaTiO3 interface: Band alignment and chemical properties”, Appl. Phys Lett., vol. 99 (2011), id 182905
- Yu. Matveyev, A. Zenkevich, Yu Lebedinskii, S. Thiess, W. Drube, “Effect of biasing at elevated temperature on the electronic structure of Pt/HfO2/Si stacks”, Microel. Eng., vol. 88 (2011), p. 1353.
- A. P. Alekhin, A. A. Chouprik, S. A. Gudkova, A. M. Markeev, Yu. Yu. Lebedinskii, Yu. A. Matveyev, and A. V. Zenkevich, «Structural and electrical properties of TixAl1−xOy thin films grown by atomic layer deposition», J. Vac. Sci. Technol. B, vol. 29 (2011), id 01A302
- K. Yu. Maksimova, Yu.A. Matveyev, A.V. Zenkevich, V.N. Nevolin, A.G. Novikov, P.I. Gaidyk, A.S. Orekxov, “Investigation of the nanocomposited structures SiO2:Me formed by metal segregation driven by Si oxidation front in Si:Me layers”, Perspective Materials, vol. 2 (2010), pp. 33-38
- A.V. Zenkevich, Yu.Yu. Lebedinskii, Y.A. Matveyev, N.C. Barantsev, Y.A. Voronov, A.V. Sogoyan, V.N. Nevolin, V.I. Chichkov, S. Spiga, M. Fanciulli “Growth and investigation of novel materials applicable in CMOS technologies of nanoelectronics”, Russian Microelectronics, vol. 39 (2010), p. 184
- M.A. Lapshina, D.O. Filatov, M.A. Isakov, S.V. Tixov, Y.A. Matveyev, A.V. Zenkevich “Investigation of HfO2/SiO2/n-Si(001) MOS-structure by ballistic electron emission microscopy”. J. of Surface Investigation, vol. 5 (2010), p. 57
- A. Zenkevich, Yu. Lebedinskii, Yu. Matveyev, S. Spiga, L. Lamagna and M. Fanciulli “Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS”. Microel. Eng., vol. 86 (2009), p. 1777
- Congedo G., Spiga S., Lamanga L., Lamperti A., Lebedinskii Yu., Matveyev Yu., Zenkevich A., Chernykh P., Fanciulli M. “Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100)” Microel. Eng., vol. 86 (2009), p. 1696
Patents:
- Application for a patent in Russia №2012150774, 28.11.2012, A.V. Zenkevich, Y.A. Matveyev, “The method of the memristor formation using Si:Au solid alloy and the memristor structure”
- Patent application in Russia №2008138892, 30.09.2008. A.V. Zenkevich, Yu. Yu. Lebedinski, Y.A. Matveyev, V. N. Nevolin. “The method of the MOSFET formation using high-k metal oxide dielectrics and metal gates, and the MOSFET structure.”
- 3. Patent application in Russia №2008139703, 06.10.2008. A.V. Zenkevich, Yu. Yu. Lebedinski, Y.A. Matveyev, V. N. Nevolin “The method of the MOSFET formation using high-k metal oxide dielectrics and metal gates (alternatives)”
Overall amount of conferences contributions – 49
Personally presented: oral – 21; poster – 8
Presented by co-authors: oral – 11; poster – 9